基于Ir(piq)3的红色磷光有机电致发光器

Red Phosphorescent Organic Light-emitting Diodes Based on Ir(piq)3

摘要:

采用真空蒸镀法制备了结构为ITO/NPB(20nm)/CBP(3nm)/CBP∶Ir(piq)₃(z%,xnm)/TPBi(10nm)/Alq3(20nm)/Cs₂CO₃∶Ag₂O(2nm,20%)/Al(100nm)的器件。研究了掺杂浓度和厚度对器件性能的影响。首先选定Ir(piq)3∶CBP层的厚度为5nm, 调节掺杂浓度。结果是当掺杂浓度为10%时, 器件的效率和亮度较好;驱动电压为16V时, 最大亮度为8810cd/m²。然后在10%的掺杂浓度下, 调节CBP∶Ir(piq)₃层的厚度。当厚度为20nm时, 器件的性能较好。驱动电压为12V时, 电流密度为193mA/cm², 效率为11.92cd/A;驱动电压为19V时, 电流密度为302.45mA/cm², 亮度为10990cd/m²。无论在何种浓度和厚度下, 器件的色坐标都在红光范围内。

Abstract:

The devices were fabricated with the sturcture of ITO/NPB(20nm)/ CBP∶Ir (piq)₃ (z%, xnm)/TPBi (10nm)/Alq₃(20nm)/Cs₂CO₃∶Ag₂O (2nm, 20%)/Al (100nm) by using the method of vacuum evaporation. The performance of the devices were studied by making adjustment on the doping concentration and thickness of the red light emission layer (CBP∶Ir(piq)3).Firstly, the doping concentration was regulated when the thickness of (Ir (piq)₃∶CBP) layer was fixed to be 5nm. And it is concluded that the device has the maximum luminance of 8810cd/m² when the doping concentration is 10%. Then the thickness of (CBP∶Ir(piq)₃) layer was adjusted with keeping the doping concentration as 10%. And it is conclude that when the thickness is 20nm, the device obtains better performance. The maximum luminous efficiency is 11.92cd/A and the current density is 193mA/cm² at 12V;the maximum luminance is 10990cd/m² and the current density is 302.45mA/cm²