ZnO薄膜器件欧姆电极的高掺杂接触法制备

Fabrication of High quality Ohmic Contacts between Al and ZnO Thin Films by Introducing High Doping Layer

摘要:

利用脉冲激光沉积方法在Al/Si衬底上生长出了高质量的n型ZnO单晶薄膜。研究并总结了以金属Al材料制备ZnO薄膜器件欧姆电极的方法。选择功函数合适的金属作为电极材料, 比如In、Ti和Al等, 可以在n型ZnO薄膜上制作良好的欧姆电极。研究发现, 在金属Al和n型ZnO膜之间生长一层高掺杂的AZO层, 可得到比Al与n型ZnO直接接触更优良的欧姆性能。并且, 通过高温退火可以有效提高金属Al电极的结晶质量和电导率, 降低电极与n型ZnO界面处的接触势垒, 从而实现优良的欧姆接触性能。

Abstract:

The n-ZnO thin films were deposited on Al/Si substrates by the pulsed laser deposition (PLD) method. The fabrication method of high quality ohmic electrodes on ZnO films with Al material was studied. Choosing the metal materials, such as In, Ti, Al, with proper work function as the electrodes can achieve ohmic contacts on n-ZnO films successfully. It is found that the introduction of high doping AZO layer between Al and n-ZnO layer can achieve better ohmic characteristics. Moreover, high temperature annealing can efficiently improve the crystal quality and conductivity of Al electrodes, and reduce the contact barrier between Al and n-ZnO layers, so excellent contact characteristics can be achieved.