氧化硅RIE刻蚀工艺研究

Study on Reactive Ion Etching of SiO2

摘要:

利用反应等离子刻蚀技术对SiO₂进行干法刻蚀, 研究了不同刻蚀条件对刻蚀速率、刻蚀选择比、刻蚀面粗糙度、刻蚀均匀性等的影响。分析得出了刻蚀侧壁角度与刻蚀选择比以及抗蚀掩模自身的侧壁角度之间存在的数学关系, 这为如何获得垂直的刻蚀侧壁提供了参考。

Abstract:

SiO₂ was etched by the reactive ion etching technology and the influences of different etching conditions on etching rate, etching selectivity, etching surface roughness and etching uniformity were investigated in detail. According to the result, functional relationship between the sidewall angles of SiO₂, the etching selectivity and the sidewall angle of resist mask was obtained.