应变效应对半导体激光器输出波长的影响

Influences of Strained Effect on Output Wavelength of Semiconductor Laser

摘要:

假设应变效应仅出现在势阱底部，并可用方形势垒代替。在量子力学的框架下，对双阱结构的量子阱进行了讨论，并对输出波长的应变效应进行了分析。结果表明，在应变作用下，量子阱出现了能级漂移和能级分裂。正是这种效应为人们研制高性能量子阱光学器件提供了更大的设计空间。

Abstract:

It is assumed that the strained effect only can occur in the bottom of the quantum well, and can be substituted by the squared barrier. In the framework of quantum mechanics, the quantum well with the double well structure was discussed, and the strained effect of the output wavelength was analyzed. The results show that level shift and level splitting occure under the strained effect in the quantum well, and the strained effect provides a broad design space for the development of high performance quantum well optical devices.