日盲型AlGaN pin串联紫外探测器

AlGaN pin Solar-blind Series Connection Ultraviolet Detectors

摘要:

对采用MOCVD生长的AlGaN pin结构上制备的背照日盲型3×3 AlGaN串联紫外探测器进行了光电性能的研究。室温下单元探测器的峰值响应在278nm为0.03A/W。串联器件的正向开启电压随器件个数增加而增大，串联特性使得其暗电流较小，光生电压随器件个数的增加呈线性变化，串联器件在氙灯照射下能达到近15V的光生电压。文中还对I-V测试采样中存在的零点漂移做了分析，试给出从实验结果计算反向饱和电流密度的方法。

Abstract:

The photoelectric properties of back-illuminated solar-blind 3×3 series connection UV detectors grown by MOCVD on AlGaN pin structure were analyzed. It is shown that the peak response of every detector at 278nm is 0.03A/W at room temperature, the turn-on voltage of series connection devices increases with the number of devices, but the photovoltage changes linearly with the increase of the devices number. The nine-serial devices under xenon lamp irradiation can reach nearly 15V photovoltage. Based on analyzing the zero drift in I-V sampling tests, the methods for calculating reverse saturation current density are given.