交联剂对PVP介质膜电学特性的影响

Effects of Cross-linker on Electrical Properties of PVP

摘要:

通过分析加入不同交联剂质量分数的PVP绝缘膜MIS结构的电学特性，研究了交联剂质量对PVP薄膜电学特性的影响。交联剂PMF和PVP均溶于PGMEA，PVP绝缘膜通过溶液旋涂法由交联剂质量分数分别为1%、3%、5%、7%的四种溶液制成，四种溶液PVP的质量分数均为5%。对C-V特性、V-t特性和I-V特性的分析表明，在PVP质量分数为5%的溶液中，加入质量分数为5%的交联剂，退火之后形成的PVP绝缘膜陷阱密度最低，漏电流最小，仅为2.9×10^-8A/cm²。通过对J-V特性曲线的线性拟合发现，PVP绝缘膜在低电场情况下漏电机理为P-F效应，在高电场情况下PVP绝缘膜漏电机理存在由肖特基发射至空间电荷限制电流效应的转化。

Abstract:

It is analyzed the electrical characteristics of PVP insulation layer in the MIS structure with different cross-linker weight percentages. The cross linker PMF and PVP are dissolved in PGMEA, so PVP layers were spin coated with different cross linker weight percentages of 1%, 3%, 5% and 7%, meanwhile the weight percentage PVP is 5% in all the four solutions. Analysis on C-V, V-t and I-V characteristic curves shows, it is only under the condition that the weight percentage of both PVP solution and cross linker is 5%, the PVP insulation layer formed after annealing obtains the least interface trap density and minimum leakage current of 2.9×10^-8A/cm². After J-V curve linear fitting, it is found that the leakage mechanism of PVP insulation layer is P-F effect under low electric field, and in high electric fields, the mechanism changes from Schottky emission to space charge limited current effect.