基于Si3N4掩模的太阳电池选择性掺杂工艺研究

Study on Selective Emitter Solar Cell Fabrication Process with Si3N4Mask Layer

摘要:

设计了基于Si₃N₄掩模的太阳电池选择性掺杂工艺,并对其工艺参数进行了仿真优化。选择性掺杂电池的一次掺杂条件为仿真所得最佳非选择性掺杂电池的工艺参数。运用SILVACO软件分别对选择性掺杂的时间、预淀积浓度和温度进行了仿真研究。仿真结果表明,随着选择性掺杂的预淀积浓度的增加,光谱响应率先增加后降低;随着扩散温度和扩散时间的增加,电池的光谱响应率逐渐减小。所得最佳选择性掺杂工艺参数为预淀积磷硅玻璃杂质浓度1×10⁹ cm^-3、扩散温度800℃、扩散时间5min。

Abstract:

A selective emitter (SE) solar cell fabrication process using Si₃N₄mask layer is designed and the fabrication parameters are optimized. The first doping parameters of the SE solar cell are the same as the best doping parameters of normal solar cells. The parameters of pre-doping concentration, diffuse time and temperature are simulated and analyzed with SILVACO software. The simulation results show that the spectrum response performance enhances first then decreases with the pre-doping concentration increasing. And the spectrum response performance decreases with the increasing diffusing time and temperature. The process parameters can be chosen as: pre-doping concentration of 1×10⁹ cm^-3, diffuse time of 5min and doping diffuse temperature of 800℃.