ICP腔室压力对AlGaN表面刻蚀损伤的影响

Effects of ICP Pressure on the Surface Damages of Etched AlGaN

摘要:

对高Al组分Al_xGa_1-xN(x=50%)进行了ICP刻蚀实验研究,在刻蚀深度相同的前提条件下,对比分析了ICP腔室压力与AlGaN表面损伤之间的相互关系,并讨论了低温热退火对ICP刻蚀损伤的修复作用。XPS测试结果表明,与未经刻蚀的AlGaN表面相比,ICP刻蚀之后的AlGaN表面其表面氮空位VN明显增多,且Al2p、Ga3d等峰位均向高结合能方向漂移。分析讨论发现,ICP腔室压力过小或过大均不利于获得低损伤的刻蚀表面,此外,低温热退火(380℃-200s)对表面氮空位有一定的修复作用,但修复效果较为有限。 更多还原

Abstract:

In this work, the non-stoichiometric surface of Al_xGa_1-xN(x=50%) subjected to ICP etching was studied by XPS (X-ray Photoelectron Spectroscopy). Under the condition of identical etching depth, the effects of ICP pressure on the surface damages of etched AlGaN were investigated, furthermore, the recovery function of low-temperature annealing to nitrogen deficiency (V_N) was evaluated. XPS tests show that serious stoichiometry disorder and nitrogen deficiency appear at the AlGaN surface after ICP process, which results in the moving to the higher bind-energy of Al2p and Ga3d peaks. This study reveals that moderate ICP pressure is needed to depress the etching damages. Also, it is confirmed that low-temperature annealing (380℃-200s) can recover the nitrogen deficiency partly, but this recovery is not effective enough.