退火对不同基底上氧化钒薄膜电阻的影响

Effects of Annealing on Resistor of Vanadium Oxide Thin Films Prepared on Different Substrates

摘要:

采用直流磁控溅射的方法分别在普通玻璃与硅片上制备了氧化钒薄膜，在大气及真空氛围下分别对样品采取了退火处理，测量了退火前后薄膜的电阻，结合样品的XRD图谱进行了分析。结果表明，在普通玻璃和硅片上均得到了V₂O₅薄膜。经过大气氛围退火处理后，薄膜的结晶度明显增强，硅片上薄膜的电阻明显变小，而玻璃基底上的薄膜电阻变化则不明显。在温度升高的过程中，Si片上薄膜电阻变化范围为56～0.54MΩ。而经过真空退火处理的薄膜其电阻均发生改变，升温过程中，玻璃基底与Si片上薄膜的电阻变化范围分别为52～16MΩ4.3～0.46MΩ，说明经过退火后硅片上沉积的薄膜具有较好的电学性能。

Abstract:

Vanadium oxide thin films were prepared by DC magnetron sputtering on glass and Si substrates respectively and then annealed in the air atmosphere and vacumm. The resistors of the films were measured before and after annealing. XRD patterns of the samples show that V₂O₅ thin films are obtained both on glass and Si substrates. After annealing in the air, the degree of crystallinity of the films is significantly enhanced, and the resistor of the thin films grown on Si substrate is significantly reduced while that of the films grown on glass changes little. The resistor of thin films on Si ranges from 56 to 0.54MΩ with temperature change. After annealing in the vacuum, the resistors of thin films grown both on glass and Si are significantly reduced and the range of variation is 52～16MΩ and 4.3～0.46MΩ, respectively. It is concluded that the films grown on Si substrate own better electric properties.