Si衬底上采用溅射Fe/Si纳米多层结构制备β-FeSi2薄膜

Formation of ?-FeSi2 Films from Fe/Si Nano-multilayers on Si Substrate by Magnetron Sputtering

摘要:

采用磁控溅射的方法在Si衬底上生长Fe/Si多层膜，退火后形成了硅化物薄膜。利用X射线衍射（XRD）、Raman光谱、原子力显微镜（AFM）研究了Fe/Si膜厚比和退火温度对薄膜结构特性的影响。研究表明，当Fe/Si膜厚比为1/2，预先在衬底上沉积Fe缓冲层，退火温度为750 ℃，形成的硅化物为β-FeSi2，晶粒的平均尺寸大约为50 nm左右，且分布得比较均匀。如果Fe/Si厚度比为1/1或3/10时，形成的硅化物为ε-FeSi。随着退火温度的升高，Fe/Si之间的相互扩散逐渐增强，当退火温度为1000℃时，形成了富硅的二硅化物的高温相?-FeSi2。

Abstract:

?β-FeSi₂ films were formed on Si substrate from Fe/Si nano-multilayers by magnetron sputtering. The samples were characterized by X-ray diffraction, Raman scattering, and Atom Force Microscopy (AFM). Research results indicate that ?-FeSi2 films were formed with the Fe/Si ratio of 1/2 under the annealing temperature of 750 ℃, the average size of the grains is about 50nm, and the grains present a uniform distribution. It was also revealed that if the thickness ratio of Fe/Si is 1/1 or 3/10, ε- Fe/Si. When the annealing temperature is increased to be 1000 ℃, high temperature phase ?-FeSi2 is formed.