铝插入层对硅基AlN外延特性的影响

Influence of Al Interlayer on the Growth of AlN on Si(111) Substrate

摘要:

本文采用等离子体辅助分子束外延(PA-MBE)研究了Al金属插入层对Si(111)衬底上AlN薄膜材料生长的影响。结果证明，Al插入层可改善AlN外延层的晶体质量，而且引入Al预扩散机制可消除外延表面的孔隙。同时，采用AlN插入层预扩散有利于获得Al极性的AlN，否则倾向于获得N极性的AlN。

Abstract:

The influence of Al interlayer on the growth of AlN on Si(111) substrate was studied by using PA-MBE. It is found that the AlN crystalline quality is improved by introducing the Al interlayer, and the holes on epitaxial surface can be eliminated by adopting a pre-diffusing process. Futhermore, the AlN grown with pre-diffusing Al interlayer proves to be Al-polar, otherwise presenting N-polar characteristics.