射频磁控溅射法制备液晶光阀光导层的研究

Study on Liquid Crystal Light Valve Photoconductive Layer by RF Magnetron Sputtering

摘要:

采用射频磁控溅射的方法制备了用于液晶光阀光导层的氢化非晶硅薄膜，研究了工艺参数对氢化非晶硅薄膜透过率及光电导性能的影响。结果表明，薄膜的沉积速率随着溅射功率和衬底温度的升高呈先增加后减小的趋势，在衬底温度为300℃，溅射功率为300Ｗ左右沉积速率达到最大，在溅射2ｈ后沉积速率随着溅射时间的增加而下降；薄膜的光吸收系数随衬底温度的升高而增大，随溅射功率的增加而减小；交流电导率随衬底温度和溅射功率的升高而下降；薄膜在可见光范围内透过率随着Ｈ分压的增大而增大，且吸收边发生蓝移。

Abstract:

Hydrogenated amorphous silicon (a-Si:H) thin films used as the photoconductive films of liquid crystal light valve were prepared by RF magnetron sputtering method. The influence of process parameters on the transmittance and photoconductivity of the a-Si:H films were studied. The results show that the deposition rate increases and then decreases as the increasing sputtering power and substrate temperature. The rate achieves the highest at the substrate temperature of 300℃ and the sputtering power of 300W, and then decreases after sputtering for 2 hours. The optical absorption coefficient increases with the increase of the substrate temperature and decreases as the sputtering power increased. The AC conductivity decreases as the sputtering power and substrate temperature increased. The transmission of a-Si:H thin film in the visible range increases with the increase of hydrogen partial pressure and the absorption edge shifts to blue.