失配异质结构InGaAs/InP的MOCVD生长

MOCVD Epitaxial Growth of Mismatched Heterostructure InGaAs/InP

摘要:

基于延展波长(截止波长2.2μm)InGaAs-PIN光电探测器进行了失配异质结构In_{xGa1-xAs(x=0.72)/InP的MOCVD外延生长研究。采用宽带隙组分梯度渐变的InAlAs作为缓冲层和顶层，通过生长优化，获得了满足器件要求的外延材料。}

Abstract:

Studied is the MOCVD epitaxial growth of the lattice-mismatched heterostructure InGaAs films on InP substrate with In fraction reaching 72%. Using step grading InAlAs as buffer layers and cap layer, the epitaxial materials which meet the practial requirements were attained by optimizing the growth conditions.