PECVD制备纳米晶多晶硅薄膜

Preparation of nano-grain ploy-silicon thin films by PECVD

摘要:

以Si(100)为衬底,采用磁控溅射和射频等离子体增强化学气相沉积系统制备了Si(100)/Al膜/非晶Si膜结构的样品。对该样品进行Al诱导真空退火以制备多晶硅薄膜,采用X射线衍射仪(XRD)和AFM分析薄膜微结构及表面形貌。实验结果表明,在经过500℃、550℃Al诱导退火后,形成了择优取向为〈111〉晶向的多晶硅薄膜。AFM给出了550℃退火后薄膜表面形貌,为100～200nm大小的圆丘状硅晶粒,密集排列在薄膜表面;并对Al诱导真空退火晶化的机理进行了分析。 更多还原

Abstract:

By adopting magnetron sputtering and radio frequency plasma enhanced chemical vapor deposition system (RF-PECVD), Si(100)/Al film/amorphous Si film samples were deposited on p-type <100> single silicon. The aluminum-induced crystallization (AIC) vacuum annealing was adopted to prepare polycrystalline silicon thin films. The microstructure and the surface appearance are analyzed by X-ray diffraction instrument (XRD) and AFM. The results indicate that the <111> polycrystalline silicon thin films of selective better direction are formed after 500℃ and 550℃ aluminum-induced crystallization vacuum annealing. The AFM shows that the surface of the thin-film presents slender crystalline grains with the size of 100～200nm after 550℃ vacuum annealing, and the mechanism of crystallization is analyzed.