非晶氧化钛薄膜的电学特性研究

Electrical Properties of Amorphous Titanium Oxide Thin Films

摘要:

室温下,通过采用直流反应磁控溅射法在覆盖有氮化硅薄膜的单晶硅衬底上生长了厚度约为100nm的氧化钛薄膜。掠入射X射线衍射分析结果表明在室温下,不同氧分压下生长的氧化钛薄膜均具有非晶结构。分别采用场发射扫描电子显微镜、X射线光电子能谱对薄膜的表面和断面形貌以及薄膜的组分进行了分析和表征。对薄膜的电学特性测试发现非晶氧化钛薄膜在293～373K的温度范围内主要依靠热激发至扩展态中的电子导电。 更多还原

Abstract:

Titanium oxide thin films were fabricated on Si₃N₄/Si substrates by direct current reactive magnetron sputtering. The results of glancing incident X-ray diffraction show that all the deposited films are amorphous. The surface and cross-section morphology and compositon of the films were analyzed by field emission scanning electron microscopy and X-ray photoelectron spectra, respectively. The temperature dependences of the electrical conductivity illustrate a thermally activated conduction behavior in the temperature range of 293～373 K.