激光二极管的位移损伤效应研究

Study on Displacement Damage Effects of Laser Diodes

摘要:

以解析公式的推导、位移损伤实验结果以及位移效应的数值模拟结果为基础,分析了位移效应产生的缺陷作为非辐射复合中心和多数载流子陷阱两种情形下的激光二极管阈值电流、外微分量子效率及I-V特性随辐照注量的变化规律。通常的实验注量范围内,缺陷主要作为非辐射复合中心,导致激光二极管阈值电流随注量呈线性增大,但外微分量子效率基本不变,I-V特性低压区电流增大;当辐照注量较高,引起明显的多数载流子去除效应时,阈值电流随注量的增大不再呈线性关系,同时外微分量子效率下降,I-V特性高压区的电流减小。

Abstract:

Based on the derivation of analytical formula,displacement damage test results and numerical simulation of displacement effects,the fluence dependences of threshold current,external differential quantum efficiency and I-V characteristics are analyzed in either case of defects as the non-radiative recombination centers and defects as the traps for majority carriers.The defects primarily act as non-radiative recombination centers in ordinary range of test fluence and induce the following results that the thre...