Total Dose Radiation Induced Interface Barriers Changing of SiO2/61t-SiC Structure
Author:
Affiliation:
MU Weibing1,2,GONG Min1,CHAO Qun1(1.Institute of Electricity Engineering,CAEP,Mianyang 621900,CHN,2.School of Physical Science and Technology,Sichuan University,Chengdu 610064,CHN)
The barrier between oxide and SiC interface would change due to irradiation.And operating characteristics would be affected.I-V curves of n-type 6H-SiC MOS capacitor before and after 105rad(Si) irradiation are measured.Interface barriers are calculated by Fowler-Nordheim tunneling fit.The barrier before irradiation is 2.446 eV,and that is 1.604 eV after irradiation.Shift of barrier is main due to acceptor type interface states produced by irradiation.
