In气氛退火对Cd0.9Zn0.1Te材料电阻率的影响研究

Effects of In Diffusion Annealing on the Resistivity ofCd0.9Zn0.1Te

摘要:

在不同温度条件下对Cd_0.9Zn_0.1Te晶片进行In气氛退火热处理, 显著提高了Cd_0.9Zn_0.1Te材料的电阻率。通过实验测量和理论建模计算, 得到了1073、1023和973K条件下In原子在Cd_0.9Zn_0.1Te晶片中的扩散系数分别为4.25×10^-9cm²·s^-1、9.02×10^-10cm²·s^-1和2.17×10^-10cm²·s^-1, 并且拟合出了1073~973K范围内扩散系数和温度之间的函数关系表达式D(T)=2.15×exp(-1.9/k₀T)及频率因子D₀等数据。最后, 对实验结果进行了简要的对比和分析解释。

Abstract:

In-diffusion annealing onCd_0.9Zn_0.1Te was carried out under different temperatures, the nature of which is a process of diffusion and doping. By using In-diffusion annealing, the resistivity ofCd_0.9Zn_0.1Te is evidently improved. Through experimental measurement and theoretical modeling computation, it is figured out that the diffusion coefficient of In atom in Cd_0.9Zn_0.1Te is respectively 4.25×10^-9cm²·s^-1,9.02×10^-10cm²·s^-1 and 2.17×10^-10cm²·s^-1under the temperatures of 1073, 1023 and 973K. Based on this, it is estimated the function between the diffusion coefficient and temperature as and other data such as the frequency factor D₀. And also brief comparison and explanations were given on the experimental results.