总剂量辐照效应模型在TDI-CCD器件中的应用

Applications of Total Dose Effect Model in TDI-CCD Devices

摘要:

介绍了抗辐射加固设计使用的总剂量辐照效应模型, 研究了它在时间延迟积分电荷耦合器件(TDI-CCD)电荷转移效率参数衰减中的应用, 并通过不同剂量60Co γ辐照试验, 验证了该模型在TDI-CCD器件抗辐射加固设计中的应用价值。

Abstract:

In this paper, the model of total dose irradiation effect used for the radiation-hardened design is introduced, and its applications in attenuation of the parameters such as charge transfer efficiency (CTE) of TDI-CCD were studied. Γ radiation experiments with different dose of 60Co verify the application value of the model in the radiation-hardening design of TDI-CCD.